AIR-ASSISTED HIGH-PERFORMANCE FIELD-EFFECT TRANSISTOR WITH THIN FILMS OF PICENE

DOI: 10.1021/ja803291a
Journal: Journal of the American Chemical Society
Year of Publication: 2008
Volume: 130
Issue: 32
Authors: Hideki OkamotoNaoko KawasakiYumiko KajiYoshihiro KubozonoAkihiko Fujiwara and Minoru Yamaj

Abstruct

A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, μ, of 1.1 cm2 V−1 s−1 and the on−off ratio of >105. This excellent device performance was realized under atmospheric conditions. The μ increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.

Keyword:
A field effect transistor FET, topography